IXGR32N60C
- Manufacturer’s Part#:IXGR32N60C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HiPerFAST™, Lightspeed™
- ECAD Model:
- Description:IGBT 600V 45A 140W ISOPLUS247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 4116
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- Available: 4116
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part #IXGR32N60C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesHiPerFAST™, Lightspeed™
- ECCNEAR99
- MountThrough Hole
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2004
- Input TypeStandard
- Gate Charge110nC
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max140W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time50 ns
- Mounting TypeThrough Hole
- Number of Pins247
- Package / CaseISOPLUS247™
- Test Condition480V, 32A, 4.7 Ω, 15V
- Case ConnectionISOLATED
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Base Part NumberIXG*32N60
- Switching Energy320μJ (off)
- Fall Time-Max (tf)160ns
- Number of Elements1
- Turn On Delay Time25 ns
- Td (on/off) @ 25°C25ns/85ns
- Turn-Off Delay Time85 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Max Collector Current45A
- Max Power Dissipation140W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 32A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)215 ns
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)120A
- Collector Emitter Breakdown Voltage600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSIP-T3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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