IXTA160N085T
- Manufacturer’s Part#:IXTA160N085T
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- Description:MOSFET N-CH 85V 160A TO-263
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- In Stock: 3940
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part #IXTA160N085T
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTube
- Pin Count4
- Published2008
- Rise Time61ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Fall Time (Typ)36 ns
- Terminal FinishMatte Tin (Sn)
- Power Dissipation360W
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 1mA
- Turn-Off Delay Time65 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max360W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs6m Ω @ 50A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs164nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)1000 mJ
- Continuous Drain Current (ID)160A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.006Ohm
- Pulsed Drain Current-Max (IDM)350A
- Drain to Source Breakdown Voltage85V
- Input Capacitance (Ciss) (Max) @ Vds6400pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C160A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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