IXTA200N085T7
- Manufacturer’s Part#:IXTA200N085T7
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- Series:TrenchMV™
- ECAD Model:
- Description:MOSFET N-CH 85V 200A TO-263-7
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- In Stock: 4061
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Product Parameter
- ManufacturerIXYS
- Manufacturer's Part #IXTA200N085T7
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchMV™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published2006
- Rise Time80ns
- Vgs (Max)±20V
- Resistance5MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Case ConnectionDRAIN
- Fall Time (Typ)64 ns
- Terminal FinishMatte Tin (Sn)
- Power Dissipation480W
- Terminal PositionSINGLE
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 250μA
- Turn-Off Delay Time65 ns
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max480W Tc
- Number of Terminations6
- Rds On (Max) @ Id, Vgs5m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
- Avalanche Energy Rating (Eas)1 mJ
- Continuous Drain Current (ID)200A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)540A
- Drain to Source Breakdown Voltage85V
- Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C200A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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