IXTT16N50D2
- Manufacturer’s Part#:IXTT16N50D2
- Manufacturer:
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- ECAD Model:
- Description:MOSFET N-CH 500V 16A TO-268
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 1000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $44.39300 | US $44.39 |
10+ | US $33.29475 | US $332.95 |
30+ | US $28.85545 | US $865.66 |
100+ | US $25.52597 | US $2552.60 |
500+ | US $23.97222 | US $11986.11 |
1000+ | US $22.19650 | US $22196.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerIXYS
- Manufacturer's Part #IXTT16N50D2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2012
- Rise Time173ns
- Vgs (Max)±20V
- Rds On Max240 mΩ
- TechnologyMOSFET (Metal Oxide)
- FET FeatureDepletion Mode
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Package / CaseTO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Fall Time (Typ)220 ns
- Factory Lead Time24 Weeks
- Input Capacitance5.25nF
- Power Dissipation695W
- Turn-Off Delay Time203 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max695W Tc
- Rds On (Max) @ Id, Vgs240mOhm @ 8A, 0V
- Supplier Device PackageTO-268
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance300mOhm
- Gate Charge (Qg) (Max) @ Vgs199nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)16A
- Drain to Source Voltage (Vdss)500V
- Drain to Source Breakdown Voltage500V
- Input Capacitance (Ciss) (Max) @ Vds5250pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)0V
- Current - Continuous Drain (Id) @ 25°C16A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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