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  • In Stock: 1500
  • Available: 635119

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.44600US $2.45
10+US $2.20140US $22.01
30+US $1.71220US $51.37
100+US $1.40645US $140.65
500+US $1.34530US $672.65
1000+US $1.22300US $1223.00

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The MBRM110LT1G is a Schottky diode produced by ON Semiconductor. Here's a detailed description:

Key Features:

  • Schottky Barrier: The MBRM110LT1G utilizes a Schottky barrier design, which results in low forward voltage drop and fast switching characteristics.
  • Low Forward Voltage Drop: With a low forward voltage drop, the diode minimizes power losses and heat generation during operation, making it suitable for high-efficiency applications.
  • Fast Switching Speed: It offers fast switching speed, enabling rapid response times in rectification and switching circuits.
  • High Current Capability: The diode can handle relatively high forward current levels, making it suitable for power supply and rectification applications.
  • Low Reverse Leakage Current: It exhibits low reverse leakage current, ensuring minimal current flow in the reverse direction, which is crucial for preventing undesired conduction in off-state conditions.
  • High Temperature Operation: Designed for high-temperature operation, the MBRM110LT1G can withstand elevated temperatures encountered in various applications.
  • Compact Package: It is available in a compact surface-mount package, offering space-saving advantages and facilitating high-density circuit designs.


  • Power supply rectification
  • Reverse polarity protection
  • Voltage clamping
  • Switching power converters
  • Battery charging circuits
  • DC-DC converters
  • Voltage multipliers
  • Power management in portable devices

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.


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