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MC33152DR2G
- Manufacturer’s Part#:MC33152DR2G
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- ECAD Model:
- Description:IC DRIVER MOSFET DUAL HS 8SOIC
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- Quantity:RFQAdd to RFQ List
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- In Stock: 812000
- Available: 160001
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $1.29300 | US $1.29 |
| 10+ | US $0.86200 | US $8.62 |
| 30+ | US $0.64650 | US $19.40 |
| 100+ | US $0.51720 | US $51.72 |
| 500+ | US $0.47410 | US $237.05 |
| 1000+ | US $0.43100 | US $431.00 |
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- Description
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- Shopping Guide
The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current digital signals to drive large capacitive loads with high slew rates.
These devices feature low input current making them CMOS/LSTTL logic compatible, input hysteresis for fast output switching that is independent of input transition time, and two high current totem pole outputs ideally suited for driving power MOSFETs. Also included is an undervoltage lockout with hysteresis to prevent system erratic operation at low supply voltages. Typical applications include switching power supplies, dc−to−dc converters, capacitor charge pump voltage doublers/inverters, and motor controllers. This device is available in dual−in−line and surface mount packages.
Features
• Two Independent Channels with 1.5 A Totem Pole Outputs
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator Control ICs
• NCV Prefix for Automotive and Other Applications Requiring Site and Change Controls
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These are Pb−Free and Halide−Free Devices
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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