MLD1N06CLT4
- Manufacturer’s Part#:MLD1N06CLT4
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- Series:SMARTDISCRETES™
- ECAD Model:
- Description:IC MOSFET POWER N-CH 1A 62V DPAK
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- Quantity:RFQAdd to RFQ List
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- In Stock: 250000
- Available: 7094
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.87000 | US $0.87 |
10+ | US $0.58000 | US $5.80 |
30+ | US $0.43500 | US $13.05 |
100+ | US $0.34800 | US $34.80 |
500+ | US $0.31900 | US $159.50 |
1000+ | US $0.29000 | US $290.00 |
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- Description
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- Shopping Guide
The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in−rush current or a shorted load condition could occur.This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and technology for low on−resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device to be applied without use of external transient suppression components.
The Gate−Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV.
The Gate−Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads.
Their unique design provides voltage clamping that is essentially independent of operating temperature.
Features
• Pb−Free Package is Available
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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Delivery Time
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