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MTD3055VL

  • In Stock: 10044
  • Available: 2013

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.95000US $4.95
10+US $4.45500US $44.55
30+US $3.46500US $103.95
100+US $2.84625US $284.63
500+US $2.72250US $1361.25
1000+US $2.47500US $2475.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    MTD3055VL
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Part Status
    Active
  • Operating Temperature
    -55°C~175°C TJ
  • Factory Lead Time
    8 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    FET General Purpose Powers
  • Number of Terminations
    2
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Pin Count
    3
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2000
  • Pbfree Code
    yes
  • Current Rating
    12A
  • Additional Feature
    AVALANCHE RATED
  • Voltage - Rated DC
    60V
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Weight
    260.37mg
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Termination
    SMD/SMT
  • Power Dissipation
    3.9W
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    3.9W Ta 48W Tc
  • Turn On Delay Time
    20 ns
  • Turn-Off Delay Time
    30 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM)
    42A
  • Avalanche Energy Rating (Eas)
    72 mJ
  • Continuous Drain Current (ID)
    12A
  • Resistance
    107mOhm
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Threshold Voltage
    1.5V
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 5V
  • Vgs (Max)
    ±20V
  • Rise Time
    190ns
  • Fall Time (Typ)
    90 ns
  • Nominal Vgs
    1.5 V
  • Dual Supply Voltage
    60V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 6A, 5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC
  • JESD-30 Code
    R-PSSO-G2

SHIPPING GUIDE

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