NTD4302G
- Manufacturer’s Part#:NTD4302G
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- Description:MOSFET N-CH 30V 8.4A DPAK
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- In Stock: 461
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- Available: 461
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTD4302G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published2010
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating68A
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation75W
- Threshold Voltage1.9V
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Turn-Off Delay Time40 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.04W Ta 75W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs10m Ω @ 20A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)722 mJ
- Continuous Drain Current (ID)68A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)28A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 24V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C8.4A Ta 68A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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