NTD4813NT4G
- Manufacturer’s Part#:NTD4813NT4G
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- Description:MOSFET N-CH 30V 7.6A DPAK
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- In Stock: 10419
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- Available: 10419
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTD4813NT4G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Part StatusObsolete
- Operating Temperature-55°C~175°C TJ
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Number of Pins4
- PackagingTape & Reel (TR)
- Surface MountYES
- Number of Terminations2
- Terminal FinishTin (Sn)
- Terminal FormGULL WING
- Pin Count4
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published2008
- Pbfree Codeyes
- Current Rating40A
- Voltage - Rated DC30V
- Case ConnectionDRAIN
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Power Dissipation1.94W
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.27W Ta 35.3W Tc
- Turn On Delay Time10.5 ns
- Turn-Off Delay Time10.1 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)7.6A
- Pulsed Drain Current-Max (IDM)90A
- Avalanche Energy Rating (Eas)72 mJ
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 12V
- Gate Charge (Qg) (Max) @ Vgs7.9nC @ 4.5V
- Vgs (Max)±20V
- Rise Time19.3ns
- Fall Time (Typ)19.3 ns
- Current - Continuous Drain (Id) @ 25°C7.6A Ta 40A Tc
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Rds On (Max) @ Id, Vgs13m Ω @ 30A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- JESD-30 CodeR-PSSO-G2
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