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NTD4909NT4G

  • In Stock: 374669
  • Available: 6

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.59844US $0.60
10+US $0.39896US $3.99
30+US $0.29922US $8.98
100+US $0.23938US $23.94
500+US $0.21943US $109.71
1000+US $0.19948US $199.48

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    NTD4909NT4G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • ECCN
    EAR99
  • Width
    6.22mm
  • Height
    2.38mm
  • Length
    6.73mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    4
  • Published
    2007
  • Vgs (Max)
    ±20V
  • Resistance
    12MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    5 Weeks
  • Power Dissipation
    1.37W
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    21 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    1.37W Ta 29.4W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 30A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    8.8A
  • Gate Charge (Qg) (Max) @ Vgs
    17.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    28 mJ
  • Continuous Drain Current (ID)
    12.1A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1314pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    8.8A Ta 41A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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