NTD78N03G
- Manufacturer’s Part#:NTD78N03G
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- ECAD Model:
- Description:MOSFET N-CH 25V 11.4A DPAK
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- In Stock: 11137
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- Available: 11137
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTD78N03G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published2006
- Rise Time68ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating78A
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)42 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation64W
- Number of Elements1
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC25V
- Turn-Off Delay Time23 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max1.4W Ta 64W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs6m Ω @ 78A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)722.5 mJ
- Continuous Drain Current (ID)78A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.006Ohm
- Pulsed Drain Current-Max (IDM)210A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds2250pF @ 12V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C11.4A Ta 78A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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