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NTJD5121NT1G

  • In Stock: 300000
  • Available: 1560510

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.09636US $0.10
10+US $0.06424US $0.64
30+US $0.04818US $1.45
100+US $0.03854US $3.85
500+US $0.03533US $17.67
1000+US $0.03212US $32.12

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    NTJD5121NT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    1.35mm
  • Height
    1mm
  • Length
    2.2mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2007
  • Rise Time
    34ns
  • Resistance
    1.6Ohm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.7 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    250mW
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Contact Plating
    Tin
  • Fall Time (Typ)
    32 ns
  • Base Part Number
    NTJD5121N
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    250W
  • Threshold Voltage
    1.7V
  • Additional Feature
    LOW THRESHOLD
  • Number of Elements
    2
  • Turn On Delay Time
    22 ns
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    34 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    266mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    1.6 Ω @ 500mA, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    0.9nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    295mA
  • Drain to Source Voltage (Vdss)
    60V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    26pF @ 20V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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