NTMFS4897NFT3G
- Manufacturer’s Part#:NTMFS4897NFT3G
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- ECAD Model:
- Description:MOSFET N-CH 30V SO-8FL
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- In Stock: 200
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- Available: 200
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTMFS4897NFT3G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- Width6.1mm
- Height1.1mm
- Length5.1mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count5
- Published2010
- Rise Time24ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN, 5 Leads
- Case ConnectionDRAIN
- Fall Time (Typ)13 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation96.2W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time26 ns
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Radiation HardeningNo
- Turn-Off Delay Time36 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max950mW Ta 96.2W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs2m Ω @ 22A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs83.6nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)171A
- Drain-source On Resistance-Max0.003Ohm
- Pulsed Drain Current-Max (IDM)288A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds5660pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C17A Ta 171A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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