NTMKE4892NT1G
- Manufacturer’s Part#:NTMKE4892NT1G
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- Description:MOSFET N-CH 30V 126A ICEPAK
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- In Stock: 8285
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- Available: 8285
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTMKE4892NT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count3
- Published2011
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / Case5-ICEPAK
- Case ConnectionDRAIN
- Terminal PositionBOTTOM
- Number of Elements1
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.8W Ta 89W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs2.6m Ω @ 24A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)26A
- Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
- Avalanche Energy Rating (Eas)290 mJ
- Continuous Drain Current (ID)148A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.0026Ohm
- Pulsed Drain Current-Max (IDM)210A
- Input Capacitance (Ciss) (Max) @ Vds4270pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C26A Ta 148A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-XBCC-N3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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