NTMS3P03R2G
- Manufacturer’s Part#:NTMS3P03R2G
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- Description:MOSFET P-CH 30V 2.34A 8-SOIC
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- In Stock: 10052
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- Available: 10052
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTMS3P03R2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- FET TypeP-Channel
- PackagingTape & Reel (TR)
- Pin Count8
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeno
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Qualification StatusCOMMERCIAL
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max730mW Ta
- Reach Compliance Codeunknown
- Number of Terminations8
- Rds On (Max) @ Id, Vgs85m Ω @ 3.05A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)135 pF
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)2.34A
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.085Ohm
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 24V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C2.34A Ta
Environmental & Export Classifications
- HTSUS8541.21.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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