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NVMD4N03R2G

  • In Stock: 155196
  • Available: 18

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.17396US $1.17
10+US $0.78264US $7.83
30+US $0.58698US $17.61
100+US $0.46958US $46.96
500+US $0.43045US $215.23
1000+US $0.39132US $391.32

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    NVMD4N03R2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2012
  • Rise Time
    14ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Powers
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    26 Weeks
  • Turn On Delay Time
    7 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Turn-Off Delay Time
    16 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 4A, 10V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Drain Current-Max (Abs) (ID)
    4A
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    4A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 20V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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