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PBSS8510PA,115

  • In Stock: 478369
  • Available: 13

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.40128US $0.40
10+US $0.26752US $2.68
30+US $0.20064US $6.02
100+US $0.16051US $16.05
500+US $0.14714US $73.57
1000+US $0.13376US $133.76

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Product Parameter

  • Manufacturer
    Nexperia
  • Manufacturer's Part #
    PBSS8510PA,115
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • Polarity/Channel Type
    NPN
  • Package / Case
    3-PowerUDFN
  • Part Status
    Active
  • Operating Temperature
    150°C TJ
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Base Part Number
    PBSS8510
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Pin Count
    3
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2010
  • Case Connection
    COLLECTOR
  • Max Power Dissipation
    2.1W
  • Transistor Type
    NPN
  • Current - Collector Cutoff (Max)
    100nA
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    5.2A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    150MHz
  • Max Breakdown Voltage
    100V
  • hFE Min
    30
  • Power Dissipation
    2.1W
  • Emitter Base Voltage (VEBO)
    6V
  • Gain Bandwidth Product
    150MHz
  • Collector Base Voltage (VCBO)
    100V
  • Frequency
    150MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    95 @ 2A 2V
  • Vce Saturation (Max) @ Ib, Ic
    340mV @ 260mA, 5.2A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3

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