PHKD13N03LT,118
- Manufacturer’s Part#:PHKD13N03LT,118
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- Series:TrenchMOS™
- ECAD Model:
- Description:MOSFET 2N-CH 30V 10.4A 8SOIC
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- In Stock: 556
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- Available: 556
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Product Parameter
- ManufacturerNexperia
- Manufacturer's Part #PHKD13N03LT,118
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchMOS™
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- PackagingTape & Reel (TR)
- Pin Count8
- Published2011
- Rise Time7ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)11 ns
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Power Dissipation3.57W
- Number of Elements2
- Vgs(th) (Max) @ Id2V @ 250μA
- Turn-Off Delay Time23 ns
- Qualification StatusNot Qualified
- Max Power Dissipation3.57W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs20m Ω @ 8A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs10.7nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)10.4A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.02Ohm
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds752pF @ 15V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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