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PMGD280UN,115

  • In Stock: 50000
  • Available: 963938

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.62000US $1.62
10+US $1.08000US $10.80
30+US $0.81000US $24.30
100+US $0.64800US $64.80
500+US $0.59400US $297.00
1000+US $0.54000US $540.00

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Product Parameter

  • Manufacturer
    Nexperia
  • Manufacturer's Part #
    PMGD280UN,115
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchMOS™
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • HTS Code
    8541.29.00.75
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    1997
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Power - Max
    400mW
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    4 Weeks
  • Power Dissipation
    400mW
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    340m Ω @ 200mA, 4.5V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    20V
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.87A
  • Gate Charge (Qg) (Max) @ Vgs
    0.89nC @ 4.5V
  • Continuous Drain Current (ID)
    870mA
  • Drain to Source Voltage (Vdss)
    20V
  • Drain-source On Resistance-Max
    0.34Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 20V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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