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PMGD780SN,115

  • In Stock: 20100000
  • Available: 1118677

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.20000US $1.20
10+US $0.80000US $8.00
30+US $0.60000US $18.00
100+US $0.48000US $48.00
500+US $0.44000US $220.00
1000+US $0.40000US $400.00

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Product Parameter

  • Manufacturer
    Nexperia
  • Manufacturer's Part #
    PMGD780SN,115
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    TrenchMOS™
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    4 Weeks
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Surface Mount
    YES
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Published
    2010
  • HTS Code
    8541.29.00.75
  • Power - Max
    410mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Power Dissipation
    410mW
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    0.49A
  • Drain-source On Resistance-Max
    0.92Ohm
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    60V
  • Continuous Drain Current (ID)
    490mA
  • FET Type
    2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    23pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    1.05nC @ 10V
  • FET Feature
    Logic Level Gate
  • Rds On (Max) @ Id, Vgs
    920m Ω @ 300mA, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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