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QS6K1TR

  • In Stock: 50951
  • Available: 429983

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.21000US $0.21
10+US $0.14000US $1.40
30+US $0.10500US $3.15
100+US $0.08400US $8.40
500+US $0.07700US $38.50
1000+US $0.07000US $70.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Rohm Semiconductor
  • Manufacturer's Part #
    QS6K1TR
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2006
  • Rise Time
    7ns
  • Resistance
    364MOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.5 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    1A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Fall Time (Typ)
    7 ns
  • Base Part Number
    *K1
  • Factory Lead Time
    20 Weeks
  • Power Dissipation
    1.25W
  • Threshold Voltage
    1.5V
  • Number of Elements
    2
  • Turn On Delay Time
    7 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 1mA
  • Voltage - Rated DC
    30V
  • Dual Supply Voltage
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    15 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    900mW
  • Operating Temperature
    150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    238m Ω @ 1A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    10
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    1A
  • Gate Charge (Qg) (Max) @ Vgs
    2.4nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    1A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    77pF @ 10V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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