SI2305B-TP
- Manufacturer's Part No.:SI2305B-TP
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- Description:P-CHANNELMOSFETSSOT-23 PACKAGE
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- In Stock: 689
- Available: 200000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.15345 | US $0.15 |
10+ | US $0.10230 | US $1.02 |
30+ | US $0.07673 | US $2.30 |
100+ | US $0.06138 | US $6.14 |
500+ | US $0.05627 | US $28.14 |
1000+ | US $0.05115 | US $51.15 |
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- Description
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The SI2305B-TP is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Micro Commercial Components (MCC). This component is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Package: Typically available in a compact SOT-23 package, which allows for efficient space utilization on printed circuit boards (PCBs).
- Voltage Rating: The SI2305B-TP has a maximum drain-source voltage (V_DS) of around 20V, making it suitable for low-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 3.5A, which is adequate for many low to medium power applications.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which helps minimize power loss and heat generation during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 2.5V, allowing for efficient switching at lower gate voltages.
- Switching Speed: The SI2305B-TP features fast switching capabilities, making it suitable for high-frequency applications.
- Thermal Characteristics: It has a thermal resistance (RθJA) that allows for effective heat dissipation, which is crucial for maintaining performance and reliability in various operating conditions.
Applications:
- Power Management: Used in DC-DC converters, battery management systems, and power supply circuits.
- Switching Applications: Ideal for load switching in consumer electronics, automotive applications, and industrial equipment.
- Signal Amplification: Can be utilized in amplifiers and signal processing circuits.
Electrical Characteristics:
- Input Capacitance (C_iss): Typically around 1000 pF, which influences the speed of the device.
- Output Capacitance (C_oss): Affects the switching performance and is usually in the range of 100 pF.
- Reverse Transfer Capacitance (C_rss): Important for determining the feedback characteristics in switching applications.
Conclusion:
The SI2305B-TP from Micro Commercial Components is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its compact size, low on-resistance, and favorable electrical characteristics make it a popular choice among engineers and designers looking to optimize performance in their circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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