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SI2319CDS-T1-GE3

  • In Stock: 10000
  • Available: 3230

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.55770US $0.56
10+US $0.37180US $3.72
30+US $0.27885US $8.37
100+US $0.22308US $22.31
500+US $0.20449US $102.25
1000+US $0.18590US $185.90

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Description

The SI2319CDS-T1-GE3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by VBsemi. MOSFETs are semiconductor devices commonly used for switching and amplifying electronic signals in a variety of applications.

Key Features:

  • N-Channel Enhancement Mode: The SI2319CDS-T1-GE3 operates in enhancement mode, meaning it normally remains off until a suitable gate voltage is applied.

  • Low On-Resistance: With a low on-resistance (RDS(on)), this MOSFET minimizes power losses during conduction, leading to higher efficiency in switching applications.

  • Fast Switching Speed: This MOSFET offers fast switching characteristics, allowing for rapid turn-on and turn-off transitions, which is beneficial for high-frequency switching circuits.

  • Low Gate Threshold Voltage: The MOSFET has a low gate threshold voltage, making it compatible with low-voltage control signals typically used in digital logic circuits and microcontroller-based systems.

  • Small Form Factor: Packaged in a compact and surface-mountable package, the SI2319CDS-T1-GE3 offers space-saving advantages and ease of integration into various electronic designs.

  • High Voltage Rating: This MOSFET can handle relatively high drain-source voltage levels, making it suitable for a wide range of voltage applications.

  • RoHS Compliance: The SI2319CDS-T1-GE3 complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it meets environmental and safety standards.

Applications:

  • Switching Regulators: Used as switching elements in DC-DC converters and voltage regulators for efficient power conversion in various electronic devices and systems.

  • Power Management: Integrated into power management circuits for controlling power distribution, load switching, and battery charging in portable electronics, industrial equipment, and automotive systems.

  • Motor Drive: Employed in motor drive circuits for controlling the speed and direction of DC motors and brushless DC (BLDC) motors in applications such as robotics, drones, and electric vehicles.

  • LED Lighting: Utilized in LED driver circuits for dimming, current regulation, and power switching in LED lighting systems, displays, and signage.

  • Load Switching: Act as load switches in battery-powered devices, smartphones, tablets, and wearables to control the power supply to various subsystems and components.

  • Audio Amplifiers: Integrated into audio amplifier circuits for switching audio signals and controlling speaker outputs in audio systems, amplifiers, and multimedia devices.

  • Voltage Level Shifting: Used for level shifting applications in digital circuits, signal conditioning, and interfacing between different voltage domains.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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