SI2342DS-T1-GE3
- Manufacturer’s Part#:SI2342DS-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- ECAD Model:
- Description:MOSFET N-CH 8V 6A SOT-23
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 9000
- Available: 20000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.63600 | US $0.64 |
10+ | US $0.42400 | US $4.24 |
30+ | US $0.31800 | US $9.54 |
100+ | US $0.25440 | US $25.44 |
500+ | US $0.23320 | US $116.60 |
1000+ | US $0.21200 | US $212.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part #SI2342DS-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Height1.12mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Published2015
- Rise Time14ns
- Vgs (Max)±5V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Powers
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Contact PlatingTin
- Fall Time (Typ)25 ns
- Factory Lead Time14 Weeks
- Power Dissipation1.3W
- Terminal PositionDUAL
- Threshold Voltage800mV
- Number of Channels1
- Number of Elements1
- Turn On Delay Time6 ns
- Vgs(th) (Max) @ Id800mV @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time65 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs17m Ω @ 7.2A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs15.8nC @ 4.5V
- Gate to Source Voltage (Vgs)5V
- Continuous Drain Current (ID)6A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage8V
- Input Capacitance (Ciss) (Max) @ Vds1070pF @ 4V
- Drive Voltage (Max Rds On,Min Rds On)1.2V 4.5V
- Current - Continuous Drain (Id) @ 25°C6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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