SI3446ADV-T1-GE3
- Manufacturer’s Part#:SI3446ADV-T1-GE3
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- Categories:
- Sub-Categories:
- Series:TrenchFET®
- ECAD Model:
- Description:MOSFET N-CH 20V 6A 6-TSOP
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- In Stock: 6228
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- Available: 6228
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part #SI3446ADV-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count6
- Published2014
- Rise Time86ns
- Vgs (Max)±12V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)10 ns
- Terminal FinishPURE MATTE TIN
- Power Dissipation2W
- Terminal PositionDUAL
- Threshold Voltage1.8V
- Number of Elements1
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time25 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2W Ta 3.2W Tc
- Number of Terminations6
- Rds On (Max) @ Id, Vgs37m Ω @ 5.8A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)5.8A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.037Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds640pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Current - Continuous Drain (Id) @ 25°C6A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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