SI4888DY-T1-GE3
- Manufacturer’s Part#:SI4888DY-T1-GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- ECAD Model:
- Description:MOSFET N-CH 30V 11A 8-SOIC
- Datasheet:
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- In Stock: 12674
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- Available: 12674
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part #SI4888DY-T1-GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Pin Count8
- Published2013
- Rise Time10ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)20 ns
- Terminal FinishMatte Tin (Sn)
- Power Dissipation1.6W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id1.6V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time44 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.6W Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs7m Ω @ 16A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)11A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.007Ohm
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C11A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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