SI7114DN-T1-E3
- Manufacturer’s Part#:SI7114DN-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- ECAD Model:
- Description:MOSFET N-CH 30V 11.7A 1212-8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 200000
- Available: 130429
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.82500 | US $0.83 |
10+ | US $0.55000 | US $5.50 |
30+ | US $0.41250 | US $12.38 |
100+ | US $0.33000 | US $33.00 |
500+ | US $0.30250 | US $151.25 |
1000+ | US $0.27500 | US $275.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part #SI7114DN-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesTrenchFET®
- ECCNEAR99
- MountSurface Mount
- Width3.05mm
- Height1.04mm
- Length3.05mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2016
- Rise Time10ns
- Vgs (Max)±20V
- Resistance7.5mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Powers
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / CasePowerPAK® 1212-8
- Case ConnectionDRAIN
- Fall Time (Typ)10 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time14 Weeks
- Power Dissipation1.5W
- Terminal PositionDUAL
- Threshold Voltage1V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.5W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs7.5m Ω @ 18.3A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)42 mJ
- Continuous Drain Current (ID)18.3A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)60A
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C11.7A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- JESD-30 CodeS-XDSO-C5
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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