SLA5037
- Manufacturer’s Part#:SLA5037
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- ECAD Model:
- Description:MOSFET 4N-CH 100V 10A 12SIP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 19939
- Available: 12
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $9.94950 | US $9.95 |
10+ | US $8.95455 | US $89.55 |
30+ | US $6.96465 | US $208.94 |
100+ | US $5.72096 | US $572.10 |
500+ | US $5.47223 | US $2736.12 |
1000+ | US $4.97475 | US $4974.75 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSanken Electric Co., Ltd.
- Manufacturer's Part #SLA5037
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case12-SIP
- Part StatusActive
- Operating Temperature150°C TJ
- Factory Lead Time12 Weeks
- MountThrough Hole
- PackagingTube
- Number of Terminations12
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pin Count12
- Qualification StatusNot Qualified
- Number of Elements4
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Published2001
- Pbfree Codeyes
- HTS Code8541.29.00.95
- Max Power Dissipation5W
- Power - Max5W
- Mounting TypeThrough Hole
- Transistor Element MaterialSILICON
- Operating ModeENHANCEMENT MODE
- Drain-source On Resistance-Max0.08Ohm
- Pulsed Drain Current-Max (IDM)40A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)200 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)100V
- Continuous Drain Current (ID)10A
- FET Type4 N-Channel
- Vgs(th) (Max) @ Id2V @ 250mA
- Input Capacitance (Ciss) (Max) @ Vds1630pF @ 10V
- FET FeatureLogic Level Gate
- Rds On (Max) @ Id, Vgs80m Ω @ 5A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T12
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