EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

STB18N60M2

  • In Stock: 58867
  • Available: 37

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.83910US $2.84
10+US $2.55519US $25.55
30+US $1.98737US $59.62
100+US $1.63248US $163.25
500+US $1.56151US $780.76
1000+US $1.41955US $1419.55

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part #
    STB18N60M2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    MDmesh™ II Plus
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.35mm
  • Height
    4.6mm
  • Length
    10.4mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    9ns
  • Vgs (Max)
    ±25V
  • Resistance
    280mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    10.6 ns
  • Base Part Number
    STB18N
  • Factory Lead Time
    26 Weeks
  • Power Dissipation
    110W
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    47 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    110W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    280m Ω @ 6.5A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    600V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    21.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    25V
  • Continuous Drain Current (ID)
    13A
  • Drain to Source Voltage (Vdss)
    600V
  • Pulsed Drain Current-Max (IDM)
    52A
  • Input Capacitance (Ciss) (Max) @ Vds
    791pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance