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STGW20NC60V

  • In Stock: 50000
  • Available: 16639

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.00000US $4.00
10+US $3.60000US $36.00
30+US $2.80000US $84.00
100+US $2.30000US $230.00
500+US $2.20000US $1100.00
1000+US $2.00000US $2000.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part #
    STGW20NC60V
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    PowerMESH™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.15mm
  • Height
    20.15mm
  • Length
    15.75mm
  • Weight
    38.000013g
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Rise Time
    11ns
  • Input Type
    Standard
  • Gate Charge
    100nC
  • Part Status
    Active
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    42.5 ns
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Current Rating
    30A
  • Package / Case
    TO-247-3
  • Test Condition
    390V, 20A, 3.3 Ω, 15V
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    STGW20
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Switching Energy
    220μJ (on), 330μJ (off)
  • Factory Lead Time
    8 Weeks
  • Power Dissipation
    200W
  • Number of Elements
    1
  • Turn On Delay Time
    31 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    31ns/100ns
  • Turn-Off Delay Time
    100 ns
  • Element Configuration
    Single
  • Max Collector Current
    60A
  • Max Power Dissipation
    200W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    280 ns
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    30A
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    100A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSFM-T3
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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