TC58NVG1S3HBAI4

The TC58NVG1S3HBAI4 is a NAND flash memory device manufactured by Toshiba, a renowned provider of semiconductor solutions. Here's a detailed description of this component:

Features:

• High-Density Storage: With a density of 8 Gbit, the TC58NVG1S3HBAI4 offers ample storage capacity for various applications, including embedded systems, consumer electronics, and industrial equipment.
• Single-Level Cell (SLC) Technology: The device utilizes SLC technology, storing one bit of data per memory cell, resulting in faster read and write operations compared to multi-level cell (MLC) or triple-level cell (TLC) NAND flash.
• Serial Peripheral Interface (SPI): Featuring an SPI interface, the flash memory device allows for simple integration with microcontrollers and other host devices, enabling easy data transfer and storage management.
• Low Power Consumption: Designed for low power consumption, the TC58NVG1S3HBAI4 optimizes energy efficiency, making it suitable for battery-powered devices and applications requiring extended battery life.
• Reliable Data Storage: With built-in error correction mechanisms and wear-leveling algorithms, the NAND flash memory ensures reliable data storage and integrity, essential for critical applications where data integrity is paramount.

Applications:

• Embedded systems
• Solid-state drives (SSDs)
• Automotive infotainment systems
• Industrial control systems
• Consumer electronics (e.g., digital cameras, printers)
• Medical devices
• Networking equipment