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TN5325N3-G-P002

  • In Stock: 189161
  • Available: 18

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.51200US $1.51
10+US $1.00800US $10.08
30+US $0.75600US $22.68
100+US $0.60480US $60.48
500+US $0.55440US $277.20
1000+US $0.50400US $504.00

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Product Parameter

  • Manufacturer
    Microchip Technology
  • Manufacturer's Part #
    TN5325N3-G-P002
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Rise Time
    15ns
  • Part Status
    Active
  • Factory Lead Time
    18 Weeks
  • Mount
    Through Hole
  • Packaging
    Tape & Reel (TR)
  • Number of Terminations
    3
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Published
    2009
  • Pbfree Code
    yes
  • Height
    5.33mm
  • Length
    5.21mm
  • Width
    4.19mm
  • Weight
    453.59237mg
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Mounting Type
    Through Hole
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Number of Channels
    1
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    740mW Ta
  • Turn On Delay Time
    20 ns
  • Turn-Off Delay Time
    25 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain-source On Resistance-Max
    7Ohm
  • Continuous Drain Current (ID)
    215mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    250V
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    110pF @ 25V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Feedback Cap-Max (Crss)
    23 pF
  • Current - Continuous Drain (Id) @ 25°C
    215mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Rds On (Max) @ Id, Vgs
    7 Ω @ 1A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    O-PBCY-T3

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