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XGP6508B
- Manufacturer’s Part#:XGP6508B
- Manufacturer:
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- Sub-Categories:
- Series:-
- ECAD Model:
- Description:Gallium nitride(GaN)Power transistor 650V 21A 1.62V @ 250uA 150mΩ @ 4A,8V 83W TO-220 MOSFET RoHS
- Quantity:RFQAdd to RFQ List
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- In Stock: 2767
- Available: 5741
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $10.72860 | US $10.73 |
| 10+ | US $9.65574 | US $96.56 |
| 30+ | US $7.51002 | US $225.30 |
| 100+ | US $6.16894 | US $616.89 |
| 500+ | US $5.90073 | US $2950.37 |
| 1000+ | US $5.36430 | US $5364.30 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Quick RFQ
Product Parameter
- ManufacturerXINGUAN
- Manufacturer's Part #XGP6508B
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series
- Package / CaseTO-220
- PackagingTube-packed
- Drain to Source Voltage (Vdss)650V
- FET TypeGallium nitride(GaN)Power transistor
- Vgs(th) (Max) @ Id1.62V @ 250uA
- Rds On (Max) @ Id, Vgs150mΩ @ 4A,8V
- Power Dissipation-Max (Ta=25°C)83W
- Continuous Drain Current (Id) @ 25°C21A
Environmental & Export Classifications
- RoHS StatusRoHS Compliant
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