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DMP2004K-7

  • In Stock: 106000
  • Available: 27000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.07227US $0.07
10+US $0.04818US $0.48
30+US $0.03614US $1.08
100+US $0.02891US $2.89
500+US $0.02650US $13.25
1000+US $0.02409US $24.09

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Diodes Incorporated
  • Manufacturer's Part #
    DMP2004K-7
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.3mm
  • Height
    1.1mm
  • Length
    2.9mm
  • Weight
    7.994566mg
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2010
  • Rise Time
    4.3ns
  • Vgs (Max)
    ±8V
  • Resistance
    900mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Contact Plating
    Tin
  • Fall Time (Typ)
    19.2 ns
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    550mW
  • Terminal Position
    DUAL
  • Threshold Voltage
    -1V
  • Additional Feature
    ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    8.5 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    20.2 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    550mW Ta
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    900m Ω @ 430mA, 4.5V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    20 pF
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.6A
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    -600mA
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    175pF @ 16V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Current - Continuous Drain (Id) @ 25°C
    600mA Ta

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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