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FGH15T120SMD-F155

  • In Stock: 250
  • Available: 362

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $54.56000US $54.56
10+US $40.92000US $409.20
30+US $35.46400US $1063.92
100+US $31.37200US $3137.20
500+US $29.46240US $14731.20
1000+US $27.28000US $27280.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    FGH15T120SMD-F155
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Weight
    6.39g
  • IGBT Type
    Trench Field Stop
  • Packaging
    Tube
  • Published
    2013
  • Input Type
    Standard
  • Gate Charge
    128nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 15A, 34 Ω, 15V
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Switching Energy
    1.15mJ (on), 460μJ (off)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    333W
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    32ns/490ns
  • Element Configuration
    Single
  • Max Collector Current
    30A
  • Max Power Dissipation
    333W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    72ns
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 15A
  • Gate-Emitter Voltage-Max
    25V
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    60A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    1.9V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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