NTD6415ANLT4G
- Manufacturer’s Part#:NTD6415ANLT4G
- Manufacturer:
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- Series:-
- ECAD Model:
- Description:MOSFET N-CH 100V 23A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 5330
- Available: 228557
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.11200 | US $2.11 |
10+ | US $1.90080 | US $19.01 |
30+ | US $1.47840 | US $44.35 |
100+ | US $1.21440 | US $121.44 |
500+ | US $1.16160 | US $580.80 |
1000+ | US $1.05600 | US $1056.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTD6415ANLT4G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- Width6.22mm
- Height2.38mm
- Length6.73mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count4
- Published2010
- Rise Time91ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)71 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time34 Weeks
- Power Dissipation83W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id2V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time40 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max83W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs52m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)79 mJ
- Continuous Drain Current (ID)23A
- Drain-source On Resistance-Max0.056Ohm
- Pulsed Drain Current-Max (IDM)80A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds1024pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C23A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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